Formation of germanium oxide microcrystals on the surface of Te-implanted Ge
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Te implantation in Ge(001) for n-type doping applications
5 10 Teþ ions cm 2 were implanted in an Ge(001) substrate using an industrial implanter with a Teþ beam energy of 180 keV. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of ...
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Using high-resolution x-ray standing waves and low-energy electron diffraction, the structure of Te adsorbed on Ge~001! was studied. A coverage-dependent structural rearrangement was observed between Te coverages of 1 and 0.5 monolayer ~ML!. At Te coverages near 1 ML, Te was found to adsorb in a bridge site, as expected. However, at Te coverages near 0.5 ML, a structure unanticipated for Group ...
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